.LIB MOS
***************************************************************
*
* Level 1 HSPICE Models for N-channel and P-channel devices
* Updated Level 1 MOSFET models using extracted parameter values 
*
* IMPORTANT:  
*   1. Insert a 5pF capacitor at the common gate of 
*   each n-p MOSFET pair to model the depletion capacitance 
*   of the ESD protection devices)
*   
*   2. Simulate the PMOS with a width of 100um and a length of 5um.
*
*   3. Simulate the NMOS with a width of 20um and a length of 5um.
* 
* To use these models, copy this file into your simulation subdirectory
* and use the following .lib statement in your SPICE file:
*    .lib 'model4007.m' MOS2
****************************************************************
.LIB MOS2
.MODEL CMOSP    PMOS    ( LEVEL   = 1                      
+VTO    = -1.40         KP      = 3.2e-5        GAMMA   = 3.30  
+PHI    = 0.65          LAMBDA  = 5.7e-2        CBD     = 40e-12
+CBS    = 2e-14         IS      = 1e-15         PB      = 0.87
+CGSO   = 0             CGDO    = 0             CGBO    = 1e-5
+CJ     = 2e-10         MJ      = 0.5           CJSW    = 1e-9
+MJSW   = 0.33          JS      = 1e-8          TOX     = 6.89e-10)
*$
.MODEL CMOSN    NMOS    ( LEVEL   = 1                        
+VTO    = 1.77          Kp      = 2.169e-4      GAMMA   = 1.85  
+PHI    = 0.65          LAMBDA  = 0.64e-2       CBD     = 10e-12
+CBS    = 0             IS      = 1e-15         PB      = 0.87
+CBS    = 2e-14         CGDO    = 88e-8         CGBO    = 0
+CJ     = 2e-10         MJ      = 0.5           CJSW    = 1e-9
+MJSW   = 0.33          JS      = 1e-8          TOX     = 1.265e-10)
.ENDL MOS2


